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Title	Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes /
Format	online resource
Internet Access	https://purl.fdlp.gov/GPO/gpo85917
Author	Schnabel, C. M., author.
Published	Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2000.

SuDoc Number	NAS 1.15:209648
Item Number	0830-D (online)
LC Number	TL521.3 .T3 no.2000- 209648
Variation of Title	Correlation of electron-beam-induced current and synchrotron white-beam X-ray topography imaged defects and epilayer growth pits in 6H-SiC Schottky diodes
Description	1 online resource (4 pages) : illustrations.
Content Type	text
Series	(NASA technical memorandum ; 2000-209648.)
General Note	"February 2000."
	"Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."
	"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
Bibliography	Includes bibliographical references (page 4).
Metadata Source	Description based on online resource; title from PDF title page (NASA, viewed Oct. 25, 2017).
Added Entry	NASA Glenn Research Center, issuing body.
Linking Field	Print version: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes (OCoLC)45475689
	Microfiche version: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes (OCoLC)44555025
URL	Address at time of PURL creation https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/20000023159.pdf

Holdings	All items

OCLC Number	(OCoLC)858263039
CGP Record Link	https://catalog.gpo.gov:443/F/?func=direct&doc_number=001033018&local_base=GPO01PUB
System Number	001033018

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